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| FMMT591 Datasheet, PDF (3/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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Data Sheet
Description
FMMT591 PNP TRANSISTOR
Mechanical Dimensions
3. COLLECTOR
2.4
1.3
1. BASE
2. EMITTER
SO T-23
Unit: mm
FEATURES
Power dissipation
PCM: 0.5 W (Tamb=25â)
Collector current
I CM: -1 A
Collector-base voltage
V (BR)CBO:
-80 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
MARKING:591
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO1
Ic=-100µA, IE=0
Ic=-10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
Collector cut-off current
ICBO
VCB=-60V, IE=0
Emitter cut-off current
IEBO
VEB=-4V, IC=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
hFE(1)
hFE(2) 1
hFE(3) 1
hFE(4) 1
VCE(sat)1 1
VCE(sat)2 1
VBE(sat) 1
VBE1
VCE=-5V, IC=-1mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-2A
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-1A
Transition frequency
fT
VCE=-10V,IC=-50mA,,f=100MHz
Collector output capacitance
Cob
VCB=-10V,f=1MHz
1Measured under pulsed conditions, Pulse width=300µs, Duty cycleâ¤2%.
-80
-60
-5
100
100
80
15
150
V
V
V
-0.1 µA
-0.1 µA
300
-0.3 V
-0.6 V
-1.2
V
-1
V
MHz
10
pF
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