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FMMT591 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Data Sheet
Description
3
2
2
1
Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current (Continuous)
Total Device Dissipation FR-5 Board (Note1)
TA = 25oC
Junction and Storage Temperature
Electrical Characteristics @ 25oC
Characteristic
Collector - Emitter Breakdown Voltage
(IC = 1.0mA)
Collector - Base Breakdown Voltage
(IC = 0.1mA)
Emitter - Base Breakdown Voltage
(IE = 0.01mA)
Collector Cutoff Current
(VCE = 35V, VEB = -0.4V)
DC Current Gain
(IC = 0.1 mA, VCE = 1.0 V)
(IC = 1.0 mA, VCE = 1.0 V)
(IC = 10 mA, VCE = 1.0 V)
(IC = 150 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
Collector - Emitter Saturation Voltage (Note 3)
(IC = 150 mA, IB = 15 mA)
(IC = 500 mA, IB = 50 mA)
Base - Emitter Saturation Voltage (Note 3)
(IC = 150 mA, IB = 15 mA)
(IC = 500 mA, IB = 50 mA)
Current - Gain - Bandwidth Product
(IC = 20 mA, VCE = 10 V, f = 100 MHz)
Collector-Base Capacitance
(VCB = 5 V, IE = 0, f = 1.0 MHz)
NPN Switching Transistor
Mechanical Dimensions
.110
.060
3
2
.016
.037
.115
.037
3
1
1
.043
.016
.004
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, TSTG
Symbol
VBR(CEO)
VBR(CBO)
VBR(EBO)
ICEX
HFE
VCE(sat)
VBE(sat)
fT
Ccb
Value
40
60
6.0
600
350
-55 to 150
Min
40
60
6.0
---
20
40
80
100
40
---
---
---
---
250
---
Units
V
V
V
mA
mW
oC
Max
Unit
---
V
---
V
---
V
0.1
µA
---
---
---
---
300
---
Vdc
0.4
0.75
Vdc
0.95
1.2
---
MHz
6.5
pF
 ▷