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FMTS06N20ED Datasheet, PDF (2/4 Pages) First Components International – 6.5A 20V Dual Die N-Channel
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FMTS06N20ED 6.5A 20V Dual Die N-Channel
ESD Protected Enhancement-Mode MOSFET
Dual N-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic 3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Test Condition
VGS = 0V, ID = 250uA
VGS = 2.5V, ID = 5.5A
VGS = 4.5V, ID = 6.5A
VDS =VGS, ID = 250uA
VDS = 16V, VGS = 0V
VGS = ± 12V, VDS = 0V
VDS = 10V, ID = 6.5A
VDS = 10V, ID = 6A
VGS = 4.5V
VDD = 10V,
ID = 1A, VGEN = 4.5V
RG = 6Ω
VDS = 10V, VGS = 0V
f = 1.0 MHz
IS = 1.5A, VGS = 0V
Min
Typ
Max
Unit
25
-
-
V
26.0 32.0
mΩ
20.0 24.0
0.6
0.8
1
V
1
uA
±10
uA
S
4.33
1.05
nC
2.49
354.67
873.33
ns
3606.7
2006.7
561.4
102
pF
62.5
1.7
A
1.2
V
January '06 Rev 1
2
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