FMTS06N20ED Datasheet, PDF (1/4 Pages) First Components International – 6.5A 20V Dual Die N-Channel

FMTS06N20ED 6.5A 20V Dual Die N-Channel
ESD Protected Enhancement-Mode MOSFET
M-MOS Semiconductor Sdn. Bhd.
20V Dual N-Channel Enhancement-Mode MOSFET
V_DS= 20V
I_D= 6.5V
R_DS(ON), V_gs@2.5V, I_ds@5.5A = 32mΩ
R_DS(ON), V_gs@4.5V, I_ds@6.5A = 24mΩ
ESD Protected : 2000V
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for Li ion battery packs use
Designed for battery switch applications
Battery Swicth, ESD protected
TSSOP-08
Internal Schematic Diagram
Top View
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
V_DS
V_GS
I_D
I_DM
TA = 25^oC
TA = 75^oC
P_D
20
± 12
V
6.5
25
A
1.5
0.96
W
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
T_J, T_stg
R_θJA
-55 to 150
o_C
50
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in² 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
January '06 Rev 1
1