FMTS06N20D Datasheet, PDF (2/2 Pages) First Components International – 20V Dual N-Channel Enhancement-Mode MOSFET

FMTS06N20D 20V Dual N-Channel Enhancement-Mode MOSFET
N-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Static
Symbol Test Condition
Min Typ Max
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
BV_DSS
R_DS(on)
R_DS(on)
V_GS(th)
I_DSS
I_GSS
Rg
V_GS = 0V, I_D = 500uA
V_GS = 2.5V, I_D = 5.2A
V_GS = 4.5V, I_D = 6A
V_DS =V_GS, I_D = 500uA
V_DS = 20V, V_GS = 0V
V_GS = +12V, V_DS = 0V
20
-
-
24
30
17
20
0.6
1
+ 100
Forward Transconductance
g_fs
V_DS = 10V, I_D = 6A
7
13
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Q_g
Q_gs
Q_gd
V_DS = 10V, I_D = 6A
V_GS = 4.5V
t_d(on)
V_DD = 10V,
t_r
t_d(off)
t_f
Ι_D = 1Α, V_GEN = 4.5V
R_G = 6Ω
C_iss
C_oss
C_rss
V_DS = 8V, V_GS = 0V
f = 1.0 MHz
7.53
1.43
2.17
12,56
15.43
33.87
8.29
871.1
164.3
116.25
Max. Diode Forward Current
I_S
1.7
Diode Forward Voltage
V_SD
I_S = 1.7A, V_GS = 0V
1.2
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Unit
V
mΩ
V
uA
nA
S
nC
ns
pF
A
V
Dec '05 Rev 2
2