FMTS06N20D Datasheet, PDF (1/2 Pages) First Components International – 20V Dual N-Channel Enhancement-Mode MOSFET

FMTS06N20D 20V Dual N-Channel Enhancement-Mode MOSFET
20V N-Channel Enhancement-Mode MOSFET
V_DS= 20V, I_D=6.0A
R_{DS(ON), Vgs@2.5V, Ids@5.2A} = 30mΩ
R_{DS(ON), Vgs@4.5V, Ids@6A} = 20mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion battery pack applications
TSSOP-08
Internal Schematic Diagram
Drain1
Drain2
(
(
Gate1
Gate2
Source1
Source2
Top View
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
+ 12
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
TA = 25^oC
TA = 75^oC
I_D
6
I_DM
30
P_D
2.0
1.3
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
T_J, T_stg
R_θJA
-55 to 150
62.5
Note: 1. Maximum DC current limited by the package
2. 1-in² 2oz Cu PCB board
Unit
V
A
W
o_C
o_C/W
Dec '05 Rev 2
1