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| FMS55N30 Datasheet, PDF (2/2 Pages) First Components International – 30V N-Channel Enhancement-Mode MOSFET | |||
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FMS55N30 30V N-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Static
Symbol Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250uA
30
Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 15A
Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 15A
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA
1
Zero Gate Voltage Drain Current
IDSS
VDS = 25V, VGS = 0V
Gate Body Leakage
IGSS
VGS = +20V, VDS = 0V
Gate Resistance
Rg
Forward Transconductance
gfs
VDS = 15V, ID = 15A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Qg
Qgs
Qgd
VDS = 15V, ID = 25A
VGS = 10V
td(on)
VDD = 15V, RL = 15Ω
tr
td(off)
tf
ÎD = 1Î, VGEN = 10V
RG = 6Ω
Ciss
Coss
Crss
VDS = 15V, VGS = 0V
f = 1.0 MHz
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
IS = 20A, VGS = 0V
Typ
-
8.0
6.0
1.8
26
6
5
17
3.5
40
6
2134
343
134
0.85
Max
-
9.6
7.2
3
1
+ 100
20
1.3
Unit
V
mΩ
V
uA
nA
Ω
S
nC
ns
pF
A
V
Jun '05 Rev 1
2
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