FMS55N30 Datasheet, PDF (1/2 Pages) First Components International – 30V N-Channel Enhancement-Mode MOSFET

FMS55N30 30V N-Channel Enhancement-Mode MOSFET
V_DS= 30V
R_{DS(ON), Vgs@10V, Ids@30A} = 7.2mΩ
R_{DS(ON), Vgs@4.5V, Ids@30A} = 9.6mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
SOP-08
Internal Schematic Diagram
Drain
Gate
Source
Top View
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
+ 20
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
TA = 25^oC
TA = 75^oC
I_D
55
I_DM
350
P_D
70
42
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
Avalanche Energy with Single Pulse
ID=50A, VDD=25V, L=0.5mH
EAS
300
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
R_θJC
1.8
R_θJA
40
Note: 1. Maximum DC current limited by the package
2. 1-in² 2oz Cu PCB board
Jun '05 Rev 1
Unit
V
A
W
o_C
mJ
o_C/W
1