FMS4414 Datasheet, PDF (2/2 Pages) First Components International – 8.5A N Channel Enhancement-Mode MOSFET

30V 8.5A N Channel Enhancement-Mode MOSFET
FMS4414 ELECTRICAL CHARACTERISTICS
Parameter
Static
Symbol Test Condition
Min Typ Max
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
BV_DSS
R_DS(on)
R_DS(on)
V_GS(th)
I_DSS
I_GSS
Rg
V_GS = 0V, I_D = 250uA
V_GS = 4.5V, I_D = 5A
V_GS = 10V, I_D = 8.5A
V_DS =V_GS, I_D = 250uA
V_DS = 24V, V_GS = 0V
V_GS = +20V, V_DS = 0V
30
-
-
30.0 40.0
20.0 26.0
1
1.4
3
1
+ 100
Forward Transconductance
g_fs
V_DS = 5V, I_D = 5A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Q_g
Q_gs
Q_gd
V_DS = 15V, I_D = 6A
V_GS = 10V
t_d(on)
V_DD = 15V, R_L = 2.2Ω
t_r
t_d(off)
t_f
Ι_D = 1Α, V_GEN = 10V
R_G = 6Ω
C_iss
C_oss
C_rss
V_DS = 15V, V_GS = 0V
f = 1.0 MHz
4.52
1.24
1.68
7.43
3.41
20.4
3.01
400.96
100.47
71.82
Max. Diode Forward Current
I_S
Diode Forward Voltage
V_SD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
I_S = 1A, V_GS = 0V
4.3
0.76
1
Unit
V
mΩ
V
uA
nA
Ω
S
nC
ns
pF
A
V
Oct '05 Rev 3
2