FMS4414 Datasheet, PDF (1/2 Pages) First Components International – 8.5A N Channel Enhancement-Mode MOSFET

30V 8.5A N Channel Enhancement-Mode MOSFET
FMS4414
V_DS= 30V
R_{DS(ON), Vgs@10V, Ids@8.5A} = 26mΩ
R_{DS(ON), Vgs@4.5V, Ids@5A} = 40mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for DC/DC Converters and Motor Drivers
Fully Characterized Avalanche Voltage and Current
SOP-08
Internal Schematic Diagram
Drain
Gate
Source
Top View
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
+ 20
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
TA = 25^oC
TA = 75^oC
I_D
8.5
I_DM
40
P_D
3
2.1
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
Junction-to-Case Thermal Resistance
R_θJC
59
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
R_θJA
16
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in² 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Uni t
V
A
W
o_C
o_C/W
1