FMP05P30 Datasheet, PDF (2/2 Pages) First Components International – 5.3A 30V P-Channel Enhancement-Mode MOSFET

FMP05P30 5.3A 30V P-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Static
Symbol Test Condition
Min Typ Max
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
BV_DSS
R_DS(on)
R_DS(on)
V_GS(th)
I_DSS
I_GSS
Rg
V_GS = 0V, I_D = -250uA
V_GS = -4.5V, I_D = -4.2A
V_GS = -10V, I_D = -5.3A
V_DS =V_GS, I_D = -250uA
V_DS = -24V, V_GS = 0V
V_GS = +20V, V_DS = 0V
-30
-
-
85.0 88.0
58.2 59.4
-1.0
-3.0
-1
+ 100
Forward Transconductance
g_fs
V_DS = -15V, I_D = -5.3A
4
7
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Q_g
Q_gs
Q_gd
V_DS = -15V, I_D = -5.3A
V_GS = -10V
t_d(on)
V_DD = -15V, R_L = 15Ω
t_r
t_d(off)
t_f
Ι_D = −1Α, V_GEN = -10V
R_G = 6Ω
C_iss
C_oss
C_rss
V_DS = -15V, V_GS = 0V
f = 1.0 MHz
9.52
3.43
1.71
10.8
2.33
22.53
3.87
551.57
90.96
60.79
Max. Diode Forward Current
I_S
-1.9
Diode Forward Voltage
V_SD
I_S = -5.3A, V_GS = 0V
-1.3
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Unit
V
mΩ
V
uA
nA
Ω
S
nC
ns
pF
A
V
August '05 Rev 2
2