FMP05P30 Datasheet, PDF (1/2 Pages) First Components International – 5.3A 30V P-Channel Enhancement-Mode MOSFET

FMP05P30 5.3A 30V P-Channel Enhancement-Mode MOSFET
V_DS= -30V
R_{DS(ON), Vgs@-10V, Ids@-5.3A} = 59.4mΩ
88 R_{DS(ON), Vgs@-4.5V, Ids@-4.2A} = mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
TSOP-6
Internal Schematic Diagram
Drain
Gate
Source
Top View
P-Channel MOSFET
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
+ 20
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
TA = 25^oC
TA = 75^oC
I_D
-5.3
I_DM
-20
P_D
2.5
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
Avalanche Energy with Single Pulse
ID=50A, VDD=25V, L=0.5mH
EAS
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
R_θJC
30
R_θJA
50
Note: 1. Maximum DC current limited by the package
2. 1-in² 2oz Cu PCB board
August '05 Rev 2
Unit
V
A
W
o_C
mJ
o_C/W
1