FMDT12N500 Datasheet, PDF (2/5 Pages) First Components International – 12A 500V N-Channel Polar HVTM Power MOSFET

FMD/T12N500 12A 500V N-Channel Polar HVTM Power MOSFET
TO-263 Outline
Symbol
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C unless otherwise specified)
Min. Typ. Max.
V_DS= 20 V; I_D = 0.5 I_D25, Note 1
13
S
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
1690
pF
182
pF
16
pF
V_GS = 10 V, V_DS = 0.5 V_DSS, I_D = I_D25
R_G = 50 Ω (External)
22
ns
27
ns
65
ns
20
ns
V_GS= 10 V, V_DS = 0.5 V_DSS, I_D = 0.5 I_D25
29
nC
11
nC
10
nC
(TO-220)
0.25
0.62 K/W
KW
Pins: 1 - Gate 2, 4 - Drain
3 - Source
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified) ^{TO-220 Outline}
Min. Typ. Max.
I_S
V_GS = 0 V
I_SM
Repetitive
V_SD
I_F = I_S, V_GS = 0 V, Note 1
t_rr
I_F = 22 A, -di/dt = 100 A/μs
Q_RM
V_R = 100 V, V_GS = 0 V
I_RM
44 A
132 A
1.5 V
200 ns
0.4
μC
4f
A
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain