FMDT12N500 Datasheet, PDF (1/5 Pages) First Components International – 12A 500V N-Channel Polar HVTM Power MOSFET

FMD/T12N500 12A 500V N-Channel Polar HVTM Power MOSFET
PolarHV^TM Power
MOSFET
FMD12N500
FMT12N500
N-Channel Enhancement Mode
Avalanche Rated
V_DSS = 500 V
I_D25 = 12 A
R_DS(on) ≤ 0.5
Ω
t_rr
≤ 200 ns
Symbol
V_DSS
V_DGR
V_GSM
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Transient
Continuous
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 10 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings _{TO-263 FMD12N500}
500
V
500
V
± 40
± 30
12
20
12
24
600
20
V
V
G
S
A
A
A
mJ
mJ
V/ns
TO-220 FMT12N500
G _DS
(TAB)
(TAB)
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
3
g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
500
V
V_GS(th)
V_DS = V_GS, I_D = 1 mA
3.0
5.5 V
I_GSS
V_GS = ± 30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
5 μA
150 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
500 mΩ
z _{Easy to mount}
z _{Space savings}
z _{High power density}