FMDS55N02 Datasheet, PDF (2/2 Pages) First Components International – 25V N-Channel Enhancement-Mode MOSFET

FMDS55N25 25V N-Channel Enhancement-Mode
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min Typ Max
Static
Drain-Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D = 250uA
25
-
-
Drain-Source On-State Resistance
R_DS(on) V_GS = 4.5V, I_D = 30A
7.5
9.0
Drain-Source On-State Resistance
R_DS(on) V_GS = 10V, I_D = 30A
4.5
6.0
Gate Threshold Voltage
V_GS(th) V_DS =V_GS, I_D = 250uA
1
1.6
3
Zero Gate Voltage Drain Current
I_DSS
V_DS = 25V, V_GS = 0V
1
Gate Body Leakage
I_GSS
V_GS = +20V, V_DS = 0V
+ 100
Gate Resistance
Rg
Forward Transconductance
g_fs
V_DS = 15V, I_D = 15A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
Q_gd
V_DS = 15V, I_D = 25A
V_GS = 10V
26
6
5
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DD = 15V, R_L = 15Ω
Ι_D = 1Α, V_GEN = 10V
R_G = 6Ω
17
3.5
40
6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
V_DS = 15V, V_GS = 0V
f = 1.0 MHz
2134
343
134
Source-Drain Diode
Max. Diode Forward Current
I_S
20
Diode Forward Voltage
V_SD
I_S = 20A, V_GS = 0V
0.85 1.3
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Unit
V
mΩ
V
uA
nA
S
ns
pF
A
V