FMDS55N02 Datasheet, PDF (1/2 Pages) First Components International – 25V N-Channel Enhancement-Mode MOSFET

FMDS55N25 25V N-Channel Enhancement-Mode MOSFET
TO-252 (D-PAK)
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for DC/DC Converters and Motor Drivers
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
V_DS= 25V
R_{DS(ON), Vgs@10V, Id@30A} = 6mΩ
R_{DS(ON), Vgs@4.5V, Id@30A} = 9mΩ
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
25
Gate-Source Voltage
V_GS
+ 20
Continuous Drain Current
I_D
55
Pulsed Drain Current
Maximum Power Dissipation
TA = 25^oC
TA = 75^oC
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J, T_stg
350
70
42
-55 to 150
Avalanche Energy with Single Pulse
ID=50A, VDD=25V, L=0.5mH
EAS
300
Junction-to-Case Thermal Resistance
R_θJC
1.8
Junction-to-Ambient Thermal Resistance (PCB mounted)
R_θJA
40
Note: 1. Maximum DC current limited by the package
2. 1-in 2oz Cu PCB board
Unit
V
A
W
o_C
mJ
o_C/W