 English |
|
|
|
|
|
|
|
| FMD50N02 Datasheet, PDF (2/2 Pages) First Components International – 25V N-Channel Enhancement-Mode MOSFET | |||
| |||
| ◁ |
FMD50N25 25V N-Channel Enhancement-Mode
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Forward Transconductance
Symbol Test Condition
BVDSS
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
Rg
gfs
VGS = 0V, ID = 250uA
VGS = 4.5V, ID = 30A
VGS = 10V, ID = 30A
VDS =VGS, ID = 250uA
VDS = 24V, VGS = 0V
VGS = +20V, VDS = 0V
VDS = 10V, ID = 35A
Min Typ Max
25
-
-
10.0 13
6.5
8.5
1
1.6
3
1
+ 100
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
VDS = 15V, ID = 35A
VGS = 10V
VDD = 15V, RL = 15â¦
ÎD = 1Î, VGEN = 10V
RG = 24â¦
VDS = 15V, VGS = 0V
f = 1.0 MHz
IS = 20A, VGS = 0V
24
5.4
4.0
15.0
3.2
36
4.8
1940
312
122
50
0.87 1.5
Unit
V
mâ¦
V
uA
nA
S
nC
ns
pF
A
V
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese