FMD50N02 Datasheet, PDF (1/2 Pages) First Components International – 25V N-Channel Enhancement-Mode MOSFET

FMD35N25 25V N-Channel Enhancement-Mode MOSFET
TO-252 (D2Pack)
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Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for DC/DC Converters and Motor Drivers
Fully Characterized Avalanche Voltage and Current
V_DS= 25V
R_{DS(ON), Vgs@10V, Ids@30A} = 8.5mΩ
= R_{DS(ON), Vgs@4.5V, Ids@30A} 13mΩ
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
25
Gate-Source Voltage
V_GS
+ 20
Continuous Drain Current
I_D
35
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
TA = 25^oC
TA = 100^oC
I_DM
350
P_D
57
23
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
Avalanche Energy with Single Pulse
ID=35A, VDD=25V, L=0.5mH
EAS
300
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
R_θJc
2.2
R_θJA
50
Note: 1. Maximum DC current limited by the package
2. 1-in² 2oz Cu PCB board
Unit
V
A
W
o_C
mJ
o_C/W