RFG50N06 Datasheet, PDF (7/8 Pages) Fairchild Semiconductor – 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs

RFG50N06, RFP50N06, RF1S50N06SM
PSPICE Electrical Model
.SUBCKT RFP50N06 2 1 3
REV 2/22/93
*NOM TEMP = 25^oC
CA 12 8 3.68e-9
CB 15 14 3.625e-9
CIN 6 8 1.98e-9
DBODY 7 5 DBDMOD
DBREAK 5 11DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 64.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.65e-9
LSOURCE 3 7 4.13e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 0.690
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 12e-3
RVTO 18 19 RVTOMOD 1
GATE
9
20
1
LGATE RGATE
5
10
-
DPLCAP
RDRAIN
ESG
6
8
+
EVTO
18 ^{- 6}
8
RIN
16
VTO
-
21
MOS1
CIN
DBREAK
MOS2
11 ⁺
EBREAK
17
18
-
DRAIN
2
LDRAIN
DBODY
S1A
12
13
8
S2A
14 ¹⁵
13
8
RSOURCE ₇ LSOURCE
3
SOURCE
RBREAK
17
18
S1B
S2B
CA
13
CB
+
EGS
-
6
8
+
EDS
-
14
5
8
RVTO
IT
19
-
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.678
.MODEL DBDMOD D (IS=9.85e-13 RS=4.91e-3 TRS1=2.07e-3 TRS2=2.51e-7 CJO=2.05e-9 TT=4.33e-8)
.MODEL DBKMOD D (RS=1.98e-1 TRS1=2.35E-4 TRS2=-3.83e-6)
.MODEL DPLCAPMOD D (CJO=1.42e-9 IS=1e-30 N=10)
.MODEL MOSMOD NMOS (VTO=3.65 KP=35 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.23e-3 TC2=-2.34e-7)
.MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.49e-5)
.MODEL RVTOMOD RES (TC1=-5.03e-3 TC2=-5.16e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.75 VOFF=-2.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.5 VOFF=-6.75)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.7 VOFF=2.3)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.3 VOFF=-2.7)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature
Options; authors, William J. Hepp and C. Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
RFG50N06, RFP50N06, RF1S50N06SM Rev. B