RFG50N06 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs

RFG50N06, RFP50N06, RF1S50N06SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
RFG50N06, RFP50N06
RF1S50N06SM
60
60
±20
50
(Figure 5)
(Figure 6)
131
0.877
-55 to 175
300
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
BV_DSS I_D = 250µA, V_GS = 0V (Figure 11)
60
V_GS(TH) V_GS = V_DS, I_D = 250µA (Figure 10)
2
I _DSS
V_DS = 60V,
T_C = 25^oC
-
V_GS = 0V
T_C = 150^oC
-
I _GSS
V_GS = ±20V
-
r_DS(ON) I_D = 50A, V_GS = 10V (Figures 9)
-
Turn-On Time
Turn-On Delay Time
Rise Time
t _ON
V_DD = 30V, I_D = 50A
-
t _d(ON)
R_L = 0.6Ω, V_GS = 10V
R_GS = 3.6Ω
-
t_r
(Figure 13)
-
Turn-Off Delay Time
t _d(OFF)
-
Fall Time
t_f
-
Turn-Off Time
t _OFF
-
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Q_g(TOT) V_GS = 0 to 20V V_DD = 48V, I_D = 50A, -
Q _g(10)
V_GS = 0 to 10V
R_L = 0.96Ω
I_g(REF) = 1.45mA
-
Q _g(TH)
V_GS = 0 to 2V
(Figure 13)
-
Input Capacitance
Output Capacitance
C _ISS
V_DS = 25V, V_GS = 0V
-
C _OSS
f = 1MHz
(Figure 12)
-
Reverse Transfer Capacitance
C _RSS
-
Thermal Resistance Junction to Case
R_θJC
(Figure 3)
-
Thermal Resistance Junction to Ambient
R _{θ JA}
TO-247
-
TO-220, TO-263
-
TYP
-
-
-
-
-
-
-
12
55
37
13
-
125
67
3.7
2020
600
200
-
-
-
MAX
-
4
1
50
±100
0.022
95
-
-
-
-
75
150
80
4.5
-
-
-
1.14
30
62
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o_C/W
o_C/W
o_C/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
V _SD
t _rr
TEST CONDITIONS
I_SD = 50A
I_SD = 50A, dI_SD/dt = 100A/µs
MIN TYP MAX UNITS
-
-
1.5
V
-
-
125
ns
©2002 Fairchild Semiconductor Corporation
RFG50N06, RFP50N06, RF1S50N06SM Rev. B