RFD12N06RLE Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
PSPICE Electrical Model
.SUBCKT HUF76409D 2 1 3 ; rev 23 August 1999
CA 12 8 6.30e-10
CB 15 14 6.30e-10
CIN 6 8 4.60e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 66.55
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.00e-9
LGATE 1 9 3.73e-9
LSOURCE 3 7 3.43e-9
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.88e-2
RGATE 9 20 3.76
RLDRAIN 2 5 10
RLGATE 1 9 37.3
RLSOURCE 3 7 34.3
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.40e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
LGATE
RLGATE
DPLCAP ₅
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
ESG
6
8
+
EVTHRES
+ ₁₉ -
EVTEMP
8
RGATE _{+ 18 - 6}
9
20 ²²
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
MMED
MSTRO
DBODY
CIN
8
S1A
12 ₁₃
8
S2A
14
15
13
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17
18
S1B
S2B
CA
13
CB
+
+ ¹⁴
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*43),3))}
.MODEL DBODYMOD D (IS = 3.84e-13 RS = 1.56e-2 TRS1 = -1.0e-3 TRS2 = 7.0e-6 CJO = 6.4e-10 TT = 5.10e-8 XTI =4.35 M = 0.52)
.MODEL DBREAKMOD D (RS = 3.70e- 1TRS1 = 9.10e- 4TRS2 = -1e-6)
.MODEL DPLCAPMOD D (CJO = 3.70e-1 0IS = 1e-3 0N = 10 M = 0.79)
.MODEL MMEDMOD NMOS (VTO = 2.08 KP = 3.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.76)
.MODEL MSTROMOD NMOS (VTO = 2.40 KP = 28 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.80 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 37.6 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.13e- 3TC2 = -3.00e-7)
.MODEL RDRAINMOD RES (TC1 = 9.80e-3 TC2 = 2.85e-5)
.MODEL RSLCMOD RES (TC1 = 5.00e-3 TC2 = 5.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.48e-3 TC2 = -8.30e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.68e- 3TC2 = 8e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5 VOFF= -2.8)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.8 VOFF= -5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Rev. B