RFD12N06RLE Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Typical Performance Curves (Continued)
100
100µs
10
OPERATION IN THIS
AREA MAY BE
1
LIMITED BY r_DS(ON)
1ms
10ms
SINGLE PULSE
T_J = MAX RATED T_C = 25^oC
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
60
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
10
STARTING T_J = 25^oC
STARTING T_J = 150^oC
1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DD = 15V
15
10
T_J = 25^oC
5
T_J = 175^oC
T_J = -55^oC
0
1.0
2.0
3.0
4.0
5.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
20
V_GS = 10V
V_GS = 5V
15
10
V_GS = 4V
V_GS = 3.5V
V_GS = 3V
5
T_C = 25^oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
80
PULSE DURATION = 80µs
I_D = 17A
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
70
I_D = 12A
I_D = 7A
60
50
40
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
V_GS = 10V, I_D = 18A
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Rev. B