FMS7G10US60 Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – Compact & Complex Module

Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter
1000
V_GE = ± 15 V, R_G = 20Ω
T_C = 25℃ ℃℃
T_C = 125℃ ------
E o ff
Eon
E o ff
100
5
10
15
20
C o ll e c t o r C u rr e n t, I [ A ]
C
Figure 14. Gate Charge Characteristics
15
Common Emitter
12
R_L = 30 Ω
T_C = 25^oC
9
V = 100 V
CC
300 V
200 V
6
3
0
0
5
10 15 20 25 30 35 40
G ate C h arg e, Q [n C ]
g
Figure 15. SOA Characteristics
100
I_C MAX. (Pulsed)
1 0 I_C MAX. (Continuous)
1
DC Operation
50us
100us
1ms
0 . 1 _{Single Nonrepetitive}
Pulse T_C = 25℃
Curves must be derated
linearly with increase
0 . 0 1 ^{in temperature}
0.1
1
10
100
1000
C o ll e c t o r - E m itt e r V o lt a g e , V [ V ]
CE
Figure 16. RBSOA Characteristics
50
10
1
Single Nonrepetitive
Pulse T_J ≤ 125℃
V_GE = 15V
0.1 ^{RG = 20 Ω}
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V_CE [V]
Figure 17. Forward Characteristics
40
Common Cathode
35
V_GE = 0V
T_C = 25℃
30 ^{TC = 125℃}
25
20
15
10
5
0
0
1
2
3
4
Forward Voltage, V_F [V]
Figure 18. Reverse Recovery Characteristics
20
10
T_rr
1
0.1
2
I_rr
Common Cathode
di/dt = 20A/㎲
T_C = 25℃
T_C = 100℃ ---------
4
6
8
10
12
Forward Current, I_F [A]
7
FMS7G10US60 Rev. B1
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