FMS7G10US60 Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – Compact & Complex Module

Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
1600
1 4 0 0 ^{Cie s}
1200
C oes
1000
Common Emitter
V_GE = 0 V, f = 1 MHz
T_C = 25 ^oC
800
C re s
600
400
200
0
0.1
1
10
C o ll e c t o r - E m itt e r V o lt a g e , V [ V ]
CE
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 8. Turn-On Characteristics vs. Gate
Resistance
1000
Common Emitter
V_CC = 300 V, V_GE = ± 15 V
I_C = 10 A
T_C = 25℃ ℃℃
T_C = 125℃ ------
Ton
100
Tr
20
40
60
80
100
120
140
G ate R e sista n c e, R [ ]
G_Ω
Figure 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_CC = 300 V, V_GE = ± 15 V
I_C = 10 A
T_C = 25℃ ℃℃
T_C = 125℃ ------
T o ff
Tf
100
Tf
1000
Common Emitter
V_CC = 300 V, V_GE = ± 15 V
I_C = 10 A
T_C = 25℃ ℃℃
T_C = 125℃ ------
100
E o ff
Eon
E o ff
20
40
60
80
100
120
140
G ate R e sista n c e, R [
G _Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
20
40
60
80
100
120
140
G ate R e sista n c e, R [ ]
G_Ω
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
1 0 0 0 V_GE = ± 15 V, R_G = 20Ω
T_C = 25℃ ℃℃
T_C = 125℃ ------
Ton
100
Tr
5
10
15
20
C o ll e c t o r C u rr e n t, I [ A ]
C
1000
Common Emitter
V_GE = ± 15 V, R_G = 20Ω
T_C = 25℃ ℃℃
T_C = 125℃ ------
T o ff
Tf
T o ff
100
Tf
5
10
15
20
C o ll e c t o r C u rr e n t, I [ A ]
C
6
FMS7G10US60 Rev. B1
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