FGB20N60SFD Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 600V, 20A Field Stop IGBT

Typical Performance Characteristics
Figure 19. Forward Characteristics
40
T_J = 125^oC
10
T_J = 75^oC
T_J = 25^oC
1
Figure 20. Reverse Current
100
10
1
0.1
0.01
T_C = 125^oC
T_C = 75^oC
T_C = 25^oC
0.1
0
1
2
3
4
Forward Voltage, V_F [V]
Figure 21. Stored Charge
60
1E-3
0
100 200 300 400 500 600
Reverse Voltage, V_R [V]
Figure 22. Reverse Recovery Time
60
50
50
200A/μs
di/dt = 100A/μs
40
40
200A/μs
30
di/dt = 100A/μs
30
20
20
10
0
5
10
15
20
Forward Current, I_F [A]
10
0
5
10
15
20
Forward Current, I_F [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
10^-5
10^-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
10^-3
10^-2
10^-1
10⁰
Rectangular Pulse Duration [sec]
FGB20N60SFD Rev. A
7
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