FGB20N60SFD Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V, 20A Field Stop IGBT

Electrical Characteristics of the IGBT T_C = 25°C unless otherwise noted
Q_g
Total Gate Charge
Q_ge
Gate to Emitter Charge
Q_gc
Gate to Collector Charge
V_CE = 400V, I_C = 20A,
V_GE = 15V
-
65
-
nC
-
7
-
nC
-
33
-
nC
Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 10A
T_C = 25^oC
T_C = 125^oC
t_rr
Q_rr
Diode Reverse Recovery Time
I_F =10A, dI_F/dt = 200A/μs
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
Min.
-
-
-
-
-
-
Typ.
1.9
1.7
34
57
41
96
Max
2.5
-
-
-
-
-
Units
V
ns
nC
FGB20N60SFD Rev. A
3
www.fairchildsemi.com