FDS4501H Datasheet, PDF (7/8 Pages) Fairchild Semiconductor – Complementary PowerTrench Half-Bridge MOSFET

Typical Characteristics Q1
10
I_D = 9.3A
8
6
V_DS = 5V
10
15V
4
2
0
0
5
10
15
20
25
30
Q_g, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
10 ^RDS(ON) ^LIMIT
1
V_GS = 10V
0.1 ^{SINGLE PULSE}
Rθ_JA = 125 ^oC/W
T _A = 25^oC
0.01
0.01
0.1
100^µs
1ms
10ms
100ms
1s
10s
DC
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
3000
2500
2000
1500
1000
500
0
0
C_ISS
f = 1 MHz
V_GS = 0 V
C_OSS
C_RSS
5
10
15
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
R_θJA = 125°C/W
T_A = 25°C
0.1
1
10
t₁, TIME (sec)
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Rθ JA(t) = r(t) + Rθ JA
RθJA = 125 ^oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/ t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4501H Rev C(W)