FDS4501H Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Complementary PowerTrench Half-Bridge MOSFET

May 2001
FDS4501H
Complementary PowerTrench^® Half-Bridge MOSFET
General Description
This complementary MOSFET half-bridge device is
produced using Fairchild’s advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
Applications
• DC/DC converter
• Power management
• Load switch
• Battery protection
Features
• Q1: N-Channel
9.3A, 30V
R_DS(on) = 18 mΩ @ V_GS = 10V
R_DS(on) = 23 mΩ @ V_GS = 4.5V
• Q2: P-Channel
–5.6A, –20V
R_DS(on) = 46 mΩ @ V_GS = –4.5V
R_DS(on) = 63 mΩ @ V_GS = –2.5V
DD
DD
DD
DD
SO-8SO-8
G
SS
S
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4501H
FDS4501H
13”
Q2
5
4
6
3
Q1
7
2
8
1
Q1
Q2
30
–20
±20
±8
9.3
–5.6
20
–20
2.5
1.2
1
–55 to +150
Units
V
V
A
W
°C
50
°C/W
25
°C/W
Tape width
12mm
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDS4501H Rev C(W)