FDMC7208S Datasheet, PDF (7/12 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ

Typical Characteristics (Q2 N-Channel) T_J = 25 °C unless otherwise noted
80
V_GS = 10 V
V_GS = 4.5 V
60
V_GS = 4 V
V_GS = 3.5 V
40
V_GS = 3 V
20
0
0.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5 2.0 2.5 3.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On- Region Characteristics
5
V_GS = 3 V
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
V_GS = 3.5 V
2
1
V_GS = 4 V V_GS = 4.5 V V_GS = 10 V
0
0
20
40
60
80
I_D, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.5
I_D = 16 A
1.4 _{VGS = 10 V}
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
24
I_D = 16 A
18
12
6
0
2
T_J = 125 ^oC
T_J = 25 ^oC
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
80
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
64
V_DS = 5 V
48
32
16
0
1
T_J = 125 ^oC
T_J = 25 ^oC
T_J = -55 ^oC
2
3
4
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
100
V_GS = 0 V
10
T_J = 125 ^oC
1
T_J = 25 ^oC
0.1
T_J = -55 ^oC
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
7
FDMC7208S Rev.C3
www.fairchildsemi.com