FDMC7208S Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ

July 2013
FDMC7208S
Dual N-Channel PowerTrench^® MOSFET
Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ
Features
General Description
Q1: N-Channel
„ Max r_DS(on) = 9.0 mΩ at V_GS = 10 V, I_D = 12 A
„ Max r_DS(on) = 11.0 mΩ at V_GS = 4.5 V, I_D = 11 A
Q2: N-Channel
„ Max r_DS(on) = 6.4 mΩ at V_GS = 10 V, I_D = 16 A
„ Max r_DS(on) = 7.5 mΩ at V_GS = 4.5 V, I_D = 13.5 A
„ Termination is Lead-free and RoHS Compliant
This device includes two 30V N-Channel MOSFETs in a dual
Power 33 (3 mm X 3 mm MLP) package. The package is en-
hanced for exceptional thermal performance.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook System
Pin 1
G1 S1 S1 S1
D1
D2
G2 S2 S2 S2
Power 33
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
T_C = 25 °C
T_A = 25 °C
(Note 3)
T_A = 25 °C
T_A = 25 °C
Q1
Q2
30
30
±20
±12
22
12^1a
26
16^1b
60
80
21
1.9^1a
0.8^1c
21
1.9^1b
0.8^1d
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
65^1a
155^1c
65^1b
155^1d
°C/W
Device Marking
FDMC7208S
Device
FDMC7208S
Package
Power 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC7208S Rev.C3
www.fairchildsemi.com