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FAN7384 Datasheet, PDF (7/17 Pages) Fairchild Semiconductor – Half-Bridge Gate-Drive IC
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Electrical Characteristics (Continued)
VBIAS (VDD, VBS) = 15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND.
The VO and IO parameters are referenced to GND and VS is applicable to HO and LO.
Symbol
Characteristics
Condition
Min. Typ. Max. Unit
SHORT-CIRCUIT PROTECTION
VCSCREF Short-circuit detector reference voltage
0.47 0.50 0.53 V
ICSCIN Short-circuit input current
VCSCIN=1V, RCSCIN=100KΩ
5 10 15 μA
ISOFT Soft turn-off source current
VDD=15V
5 10 15 mA
-VCSC Negative CSC pin immunity(5)
Voltage on CSC pin up to -12V,
Time<2μs
-20 V
FAULT DETECTION SECTION
VFINH
VFINL
VFINHYS
VFOH
VFOL
tFO
Fault input high level voltage
Fault input low level voltage
Fault input hysteresis voltage(5)
Fault output high level voltage
Fault output low level voltage
Fault output pulse width
VCSC=0V, RPULL-UP=4.7KΩ
VCSC=1V, IFO=2mA
VCSCIN=1V
2.5
V
1.2 V
0.5
V
4.7
V
0.8 V
60 100 µs
Note:
5. These parameters, although guaranteed, not 100% tested in production.
Dynamic Electrical Characteristics
TA=25°C, VBIAS (VDD, VBS) = 15.0V, VS = GND, CLoad = 1000pF unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
ton
toff
tr
tf
MT
DT
tUVFLT
tCSCFLT
tCSCFO
tCSCLO
tSDFO
tSDOFF
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
VS=0V
VS=0V
Turn-off fall time
Delay matching
Dead-time
Under-voltage filtering time(6)
CSC pin filtering time(6)
Time from CSC triggering to FO(6)
Time from CSC triggering to low-side
gate output(6)
Shutdown to FO propagation delay(6)
Shutdown to HIGH/LOW-side gate off(6)
From VCSC=1V to starting gate
turn-off
180 260 ns
170 240 ns
50 100 ns
30 80 ns
50 ns
80 120 170 ns
16
µs
300
ns
350
ns
600
ns
60
ns
100
ns
Note:
6. These parameters, although guaranteed, not 100% tested in production.
© 2006 Fairchild Semiconductor Corporation
FAN7384 Rev. 1.0.3
7
www.fairchildsemi.com
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