SGW23N60UFD Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

T = 25℃
C
100
T_C = 100℃
10
100
V = 200V
R
I = 12A
F
T_C = 25℃
T_C = 100℃
10
1
0
1
2
3
Forward Voltage Drop, V_FM [V]
Fig 18. Forward Characteristics
600
V_R = 200V
I_F = 12A
500 TC = 25℃
T_C = 100℃
400
300
200
100
0
100
di/dt [A/us]
Fig 20. Stored Charge
1000
1
100
di/dt [A/us]
1000
Fig 19. Reverse Recovery Current
100
V = 200V
R
I_F = 12A
80
T_C = 25℃
T_C = 100℃
60
40
20
0
100
di/dt [A/us]
1000
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGW23N60UFD Rev. A1