SGW23N60UFD Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

100
Common Emitter
T_C = 25℃
80
60
40
20V
15V
12V
V_GE = 10V
20
0
0
2
4
6
8
Collector - Emitter Voltage, V_CE [V]
Fig 1. Typical Output Characteristics
4
Common Emitter
V = 15V
GE
3
2
1
24A
12A
I = 6A
C
0
0
30
60
90
120
150
Case Temperature, T_C [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T = 25℃
C
16
12
8
24A
4
12A
I = 6A
C
0
0
4
8
12
16
20
Gate - Emitter Voltage, V_GE [V]
Fig 5. Saturation Voltage vs. V_GE
©2002 Fairchild Semiconductor Corporation
50
Common Emitter
V_GE = 15V
T_C = 25℃
40 _{TC = 125}℃
30
20
10
0
0.5
1
10
Collector - Emitter Voltage, V_CE [V]
Fig 2. Typical Saturation Voltage
Characteristics
20
V_CC = 300V
Load Current : peak of square wave
15
10
5
Duty cycle : 50%
T_C = 100℃
Power Dissipation = 21W
0
0.1
1
10
100
Frequency [KHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
T_C = 125℃
16
12
8
24A
4
12A
I_C = 6A
0
0
4
8
12
16
20
Gate - Emitter Voltage, V_GE [V]
Fig 6. Saturation Voltage vs. V_GE
SGW23N60UFD Rev. A1