SGR2N60UFD Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

30
T_C = 25℃
T_C = 100℃
10
1
10
V_R = 200V
I_F = 2A
T = 25℃
C
T = 100℃
C
0.1
0
1
2
3
Forward Voltage Drop, V_FM [V]
Fig 18. Forward Characteristics
120
V_R = 200V
I_F = 2A
100 ^TC ^{= 25℃}
T = 100℃
C
80
60
40
20
0
100
500
di/dt [A/us]
Fig 20. Stored Charge
1
100
500
di/dt [A/us]
Fig 19. Reverse Recovery Current
100
V = 200V
R
I = 2A
F
T = 25℃
C
80
T = 100℃
C
60
40
20
0
100
500
di/dt [A/us]
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1