SGR2N60UFD Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

12
Common Emitter
T_C = 25℃
10
8
6
4
20V
15V
12V
V_GE = 10V
2
0
0
2
4
6
8
Collector - Emitter Voltage, V_CE [V]
Fig 1. Typical Output Characteristics
4
Common Emitter
V = 15V
GE
3
2
1
2.4A
1.2A
I = 0.6A
C
0
0
30
60
90
120
150
Case Temperature, T_C [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T = 25℃
C
16
12
8
4
2.4A
1.2A
I = 0.6A
C
0
0
4
8
12
16
20
Gate - Emitter Voltage, V_GE [V]
Fig 5. Saturation Voltage vs. V_GE
©2002 Fairchild Semiconductor Corporation
6
Common Emitter
V = 15V
GE
5 ^TC ^{= 25℃}
T_C = 125℃
4
3
2
1
0
0.5
1
10
Collector - Emitter Voltage, V_CE [V]
Fig 2. Typical Saturation Voltage
Characteristics
3.0
V_CC = 300V
Load Current : peak of square wave
2.5
2.0
1.5
1.0
0.5 _{Duty cycle : 50%}
T_C = 100℃
Power Dissipation = 4W
0.0
0.1
1
10
100
Frequency [KHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
T = 125℃
C
16
12
8
2.4A
4
1.2A
I_C = 0.6A
0
0
4
8
12
16
20
Gate - Emitter Voltage, V_GE [V]
Fig 6. Saturation Voltage vs. V_GE
SGR2N60UFD Rev. A1