NDS9407 Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – Single P-Channel Enhancement Mode Field Effect Transistor

Typical Electrical and Thermal Characteristics (continued)
14
V _DS = - 1 0 V
12
10
8
6
4
2
0
0
-4
TJ = -55°C
25°C
125°C
-8
-12
-16
-20
I _D , DRAIN CURRENT (A)
Figure 13. Transconductance Variation with Drain
Current and Temperature
2.5
1a
2
1.5
1b
1c
1
0.5
0
4.5"x5" FR-4 Board
T_A = 2 5 ^o C
Still Air
0.2
0.4
0.6
0.8
1
2oz COPPER MOUNTING PAD AREA (in ² )
Figure 14. SO-8 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
4
1a
3
1b
2 ^1c
1
4.5"x5" FR-4 Board
T_A = 25^o C
Still Air
0
V _GS = - 1 0 V
0
0.2
0.4
0.6
0.8
1
2oz COPPER MOUNTING PAD AREA (in ² )
Figure 15. Maximum Steady- State Drain Current
versus Copper Mounting Pad Area.
20
10
3
1
0.3
0.1
0.03
0.01
0.1
RDS(ON) ^LIMIT
V = -10V
GS
SINGLE PULSE
R _θJA= S e e N o t e 1 c
TA = 25°C
100
1ms
u
s
10ms
100ms
1s
10s
DC
0.2
0.5 1
5
10 20
- VDS , DRAIN-SOURCE VOLTAGE (V)
60 100
Figure 16. Maximum Safe Operating Area
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
1
t1 , TIME (sec)
R _θJA (t) = r(t) * R_θJA
R _θJA = See Note 1c
P(pk)
t1
t₂
TJ - TA = P * R _θJA (t)
Duty Cycle, D = t ₁ / t ₂
10
100
300
Figure 17. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will
change depending on the circuit board design.
NDS9407.SAM Rev. B