NDS9407 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Single P-Channel Enhancement Mode Field Effect Transistor

June 1999
NDS9407
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications
such as notebook computer power management and other
battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
-3.0A, -60V. R_DS(ON) = 0.15Ω @ V_GS=-10V
R_DS(ON) = 0.24Ω @ V_GS=-4.5V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used
surface mount package.
_______________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings
Symbol Parameter
T_A = 25°C unless otherwise noted
V_DSS
V_GSS
Drain-Source Voltage
Gate-Source Voltage
I_D
Drain Current - Continuous T_A = 25°C
(Note 1a)
- Continuous T_A = 70°C
- Pulsed
T_A = 25°C
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG ^{Operating and Storage Temperature Range}
THERMAL CHARACTERISTICS
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDS9407
-60
± 20
± 3.0
± 2.4
± 12
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
©1999 Fairchild Semiconductor Corporation
NDS9407.SAM Rev. B