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| HGTG30N60B3D_04 Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |||
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HGTG30N60B3D
Typical Performance Curves Unless Otherwise Specified (Continued)
10
8
CIES
6
FREQUENCY = 1MHz
4
2
COES
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
100
0.50
0.20
10-1 0.10
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
t1
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
t2
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
200
175
150
125
100
75
50
25
0
0
25oC
100oC
-55oC
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VEC, FORWARD VOLTAGE (V)
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
50
TC = 25oC, dIEC/dt = 200A/µs
40
trr
30
ta
20
tb
10
0
1
2
5
10
20 30
IEC, FORWARD CURRENT (A)
FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3D Rev. B2
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