HGTG30N60B3D_04 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Data Sheet
HGTG30N60B3D
April 2004
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25^oC and 150^oC. The IGBT used is the
development type TA49170. The diode used in anti-parallel
with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3D
TO-247
G30N60B3D
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
E
C
G
Symbol
C
G
E
Features
• 60A, 600V, T_C = 25^oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3D Rev. B2