FP7G75US60 Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – Transfer Molded Type IGBT Module

Fig 7. Capacitance Characteristics
9000
Cies
6000
Coes
Common Emitter
V = 0V, f = 1MHz
GE
T = 25o C
C
3000
Cres
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000 _{Common Emitter}
V = 300V, V = +/- 15V
CC
GE
I = 75A
C
T = 25^oC
Ton
C
T = 125oC
C
Tr
100
0
0.5 1
10
30
V_CE, Collector-Emitter Voltage[V]
10
1
10
R_G, Gate Resistance[Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
5000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I = 75A
C
1000
T = 25oC
C
T = 125^oC
C
Toff
Tf
100
Tf
10
1
10
50
R_G, Gate Resistance[Ω]
Fig 10. Switching Loss vs. Gate Resistance
100
10
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I = 75A
C
T = 25oC
C
T = 125oC
C
Eon
1
Eoff
0.1
1
10
R_G, Gate Resistance[Ω]
Fig 11. Turn-On Characteristics vs.
Collector Current
10000
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I = 75A
C
T = 25^oC
C
T = 125^oC
C
100
Ton
Tr
10
1
20 40 60 80 100 120 140
I_C, Collector Current[A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I = 75A
C
T = 25oC
C
T = 125oC
C
Toff
100
Tf
Tf
10
20
40 60 80 100 120 140
I_C, Collector Current[A]
FP7G75US60 Rev. A
6
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