FP7G75US60 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – Transfer Molded Type IGBT Module

Electrical Characteristics of DIODE (T_J = 25°C, Unless Otherwise Specified)
Symbol
Parameter
Conditions
V_FM
Diode Forward Voltage
I_F = 75A
T_C = 25°C
T_C = 100°C
t_rr
Diode Reverse Recovery Time
T_C = 25°C
T_C = 100°C
I_rr
Diode Peak Reverse Recovery Current
I_F = 75A
di / dt = 150 A/us
T_C = 25°C
T_C = 100°C
Q_rr
Diode Reverse Recovery Charge
T_C = 25°C
T_C = 100°C
Min Typ Max Units
- 1.9 2.8
V
- 1.8 -
- 78 112
ns
- 156
- 5.7 7.5
A
- 10
- 222
nC
- 780
Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJC
R_θCS
Weight
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink (Conductive grease applied)
Weight of Module
Typ.
-
-
0.05
-
Max.
0.32
0.9
-
90
Units
°C/W
°C/W
°C/W
g
FP7G75US60 Rev. A
4
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