FNA22512A Datasheet, PDF (6/15 Pages) Fairchild Semiconductor – 1200 V Motion SPMR 2 Series

Electrical Characteristics (T_J = 25°C, unless otherwise specified.)
Inverter Part
Symbol
V_CE(SAT)
V_F
HS
t_ON
t_C(ON)
t_OFF
t_C(OFF)
t_rr
LS
t_ON
t_C(ON)
t_OFF
t_C(OFF)
t_rr
I_CES
Parameter
Conditions
Collector - Emitter Saturation V_CC = V_BS = 15 V
Voltage
V_IN = 5 V
I_C = 25 A, T_J = 25°C
FWDi Forward Voltage
V_IN = 0 V
I_F = 25 A, T_J = 25°C
Switching Times
V_PN = 600 V, V_CC = 15 V, I_C = 25 A
T_J = 25°C
V_IN = 0 V « 5 V, Inductive Load
See Figure 5
(Note 6)
V_PN = 600 V, V_CC = 15 V, I_C = 25 A
T_J = 25°C
V_IN = 0 V « 5 V, Inductive Load
See Figure 5
(Note 6)
Collector - Emitter Leakage V_CE = V_CES
Current
Min.
-
-
0.60
-
-
-
-
0.40
-
-
-
-
-
Typ. Max. Unit
1.90 2.50
V
2.00 2.60
V
1.10 1.70 ms
0.25 0.65 ms
1.15 1.75 ms
0.15 0.55 ms
0.20
-
ms
0.90 1.50 ms
0.25 0.65 ms
1.10 1.70 ms
0.15 0.55 ms
0.25
-
ms
-
5
mA
Note:
6. t_ON and t_OFF include the propagation delay of the internal drive IC. t_C(ON) and t_C(OFF) are the switching times of IGBT under the given gate-driving condition internally. For the
detailed information, please see Figure 4.
100% IC 100% IC
t_rr
V_CE
I_C
I_C
V_CE
V _IN
V _IN
V I N(O N )
t_ON
10% IC
t_C(ON)
90% IC 10% VCE
(a) turn-on
t_OFF
V IN(OFF)
t_C(OFF)
10% VCE
10% IC
(b) turn-off
Figure 4. Switching Time Definition
©2014 Fairchild Semiconductor Corporation
6
FNA22512A Rev. C0
www.fairchildsemi.com