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FMM6G50US60 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Compact & Complex Module | |||
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15
C o m m o n E m itt e r
R = 10
12
L
â¦
T = 25 oC
C
9
V = 100 V
CC
300 V
200 V
6
3
0
0
20
40
60
80
100
G ate C h arg e, Q [n C ]
g
Fig 13. Gate Charge Characteristics
160
Common Cathode
VGE = 0V
TC = 25â
120 TC = 125â
80
40
0
0
1
2
3
4
Forward Voltage, VF [V]
Fig 15. Forward Characteristics
100
10
1
Single Nonrepetitive
Pulse TJ ⤠125â
VGE = 15V
0.1 RG = 10 â¦
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, VCE [V]
Fig 14. RBSOA Characteristics
20
10
Trr
Irr
5
Common Cathode
di/dt = 100A/ã²
TC = 25â
TC = 100â
2
0
10
20
30
40
50
Forward Current, IF [A]
Fig 16. Reverse Recovery Characteristics
1000
100
10
TC = 125â
1
0.1
25â
0.0 1
1E-3
0
400
800
1200
1600
VR, Reverse Voltage [V]
Fig 17. Rectifier( Converter ) Characteristics
©2003 Fairchild Semiconductor Corporation
100
TC =125â
25â
10
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
VF, Forward Voltage [V]
Fig 18. Rectifier( Converter ) Characteristics
FMM6G50US60 Rev. A
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