FMM6G50US60 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – Compact & Complex Module

Electrical Characteristics of DIODE @ Inverter & Brake T_C = 25°C unless otherwise noted
Symbol
V_FM
Parameter
Diode Forward Voltage
t_rr
Diode Reverse Recovery Time
I_rr
Diode Peak Reverse Recovery
Current
Q_rr
Diode Reverse Recovery Charge
Test Conditions
I_F = 50A
T_C = 25°C
T_C = 100°C
T_C = 25°C
T_C = 100°C
I_F = 50A
di / dt = 100 A/us
T_C = 25°C
T_C = 100°C
T_C = 25°C
T_C = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
2.0
75
130
5
7
225
455
Max.
2.8
--
150
--
6.5
--
422
--
Units
V
ns
A
nC
Electrical Characteristics of DIODE @ Converter T_C = 25°C unless otherwise noted
Symbol
V_FM
Parameter
Diode Forward Voltage
I_RRM
Repetitive Reverse Current
Test Conditions
I_F = 50A
T_C = 25°C
T_C = 100°C
V_R = V_RRM
T_C = 25°C
T_C = 100°C
Min.
--
--
--
--
Typ.
1.2
1.2
--
5
Max.
1.6
--
8
--
Units
V
mA
Thermal Characteristics
Inverter
Converter
Weight
Symbol
R_θJC
R_θJC
R_θJC
Parameter
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
Typ.
--
--
--
210
Max.
0.9
1.3
1.3
--
Units
°C/W
°C/W
°C/W
g
NTC Thermistor Characteristics
Thermistor
Symbol
R₂₅
R₁₀₀
B_(25/100)
Parameter
Rated Resistance @ Tc = 25°C
Rated Resistance @ Tc = 100 °C
B - Value
Tol.
+/- 5 %
+/- 5 %
+/- 3 %
Typ.
5
0.415
3692
Units
KΩ
KΩ
©2003 Fairchild Semiconductor Corporation
FMM6G50US60 Rev. A