FMG2G150US60E Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Molding Type Module

10000
Common Emitter
V_CC = 300V, V_GE = +/- 15V
R
G
=
2.0Ω
T = 250C
C
T = 1250C
C
1000
Eoff
Eon
40
60
80
100
120
140
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
1000
I MAX. (Pulsed)
C
I MAX. (Continuous)
C
100
50us
100us
1㎳
DC Operation
10
Single Nonrepetitive
1 _{Pulse T = 25℃}
C
Curves must be derated
linerarly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, V [V]
CE
Fig 15. SOA Characteristics
1000
15
Common Emitter
R
L
=
2
Ω
T = 25℃
12
C
300 V
9
6
V = 100 V
CC
3
200 V
0
0
100 200 300 400 500 600 700
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
500
100
10
Safe Operating Area
V = 20V, T = 100^oC
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
Fig 16. Turn-Off SOA Characteristics
1000
100
10
Single Nonrepetitive
Pulse T ≤ 125℃
J
V = 15V
GE
R
G
=
2.0
Ω
1
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V [V]
CE
Fig 17. RBSOA Characteristics
©2002 Fairchild Semiconductor Corporation
1
0.1
0.01
1E-3
T = 25℃
C
IGBT :
DIODE :
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMG2G150US60E Rev. A