FMG2G150US60E Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Molding Type Module

35000
30000
25000
20000
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
15000
10000
Coes
5000
0
0.5
Cres
1
10
30
Collector - Emitter Voltage, V [V]
CE
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I_C = 150A
T_C = 25⁰C
T = 1250C
C
100
Ton
Tr
10
1
10
Gate Resistance, R_G [Ω]
Fig 8. Turn-On Characteristics vs.
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I = 150A
C
T_C = 25⁰C
T_C = 125⁰C
100
Toff
Tf
1
10
Gate
Resistance,
R
g
[Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V = 300V, V = +/- 15V
CC
GE
R
G
=
2.0Ω
T = 250C
C
T_C = 125⁰C
100
Ton
Tr
10
40
60
80
100
120
140
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Common Emitter
V_CC = 300V, V_GE = +/- 15V
I = 150A
C
T = 250C
C
T = 1250C
C
10000
Eon
Eoff
1000
1
10
Gate
Resistance,
R
G
[Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
R_G = 2.0Ω
T_C = 25⁰C
T = 1250C
C
100
Toff
Tf
Toff
Tf
40
60
80
100
120
140
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG2G150US60E Rev. A