FMG2G100US60 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Molding Type Module

10000
Common Emitter
V_CC = 300V, V_GE = +/- 15V
R
G
=
2.4Ω
T_C = 25⁰C
T_C = 125⁰C
1000
Eoff
Eon
100
20
40
60
80
100
120
140
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
3
Ω
T = 25℃
12
C
9
V = 100 V
6
CC
300 V
200 V
3
0
0
100
200
300
400
500
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
500
I_C MAX. (Pulsed)
100 ^{IC MAX. (Continuous)}
50us
100us
1㎳
10
DC Operation
1 ^{Single Nonrepetitive}
Pulse T_C = 25℃
Curves must be derated
linerarly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, V_CE [V]
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
V = 20V, T = 100^oC
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Fig 16. Turn-Off SOA Characteristics
600
100
10
1
Single Nonrepetitive
Pulse T ≤ 125℃
J
V = 15V
GE
R
G
=
2.4
Ω
0.1
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V [V]
CE
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
1
0.1
0.01
T = 25℃
C
IGBT :
1E-3
DIODE :
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMG2G100US60 Rev. A