FMG2G100US60 Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Molding Type Module

30000
25000
20000
Cies
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25℃
15000
10000
Coes
5000
Cres
0
0.5
1
10
30
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V_CC = 300V, V_GE = +/- 15V
I_C = 100A
T = 25⁰C
C
T = 1250C
C
100
Ton
Tr
10
1
10
Gate Resistance, R_G [Ω]
Fig 8. Turn-On Characteristics vs.
3000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I_C = 100A
T_C = 25℃
Toff
1000 T_C = 125℃
100
50
6
10
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Tf
Tf
100
10000
Common Emitter
V_CC = 300V, V_GE = +/- 15V
I_C = 100A
T = 25⁰C
C
T = 1250C
C
Eon
Eoff
1000
1
10
Gate
Resistance,
R
G
[Ω]
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
V = 300V, V = +/- 15V
CC
GE
R_G = 2.4Ω
T_C = 25⁰C
T = 1250C
C
100
Ton
Tr
10
20
40
60
80
100
120
140
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I = 100A
C
T_C = 25⁰C
T_C = 125⁰C
100
Toff
Tf
Tf
1
10
Gate
Resistance,
R
g
[Ω]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG2G100US60 Rev. A