FMC6G10US60 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – Compact & Complex Module

1000
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Eoff
100
Eon
5
10
15
20
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R_L = 30 Ω
T_C = 25℃
12
V = 100 V
CC
9
300 V
200 V
6
3
0
0
10
20
30
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
100
I MAX. (Pulsed)
C
10 ^{IC MAX. (Continuous)}
1
DC Operation
50us
100us
1㎳
0.1
Single Nonrepetitive
Pulse T_C = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector-Emitter Voltage, V [V]
CE
Fig 15. SOA Characteristics
1000
50
10
1
1
Safe Operating Area
V = 20V, T = 100℃
GE
C
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Fig 16. Turn-Off SOA Characteristics
50
10
1
Single Nonrepetitive
Pulse T ≤ 125℃
J
V = 15V
GE
R
G
=
20
Ω
0.1
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V [V]
CE
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
10
1
0.1
IGBT :
0.01
DIODE :
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMC6G10US60 Rev. A3