FMC6G10US60 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – Compact & Complex Module

Electrical Characteristics of the DIODE @ Inverter T_C = 25°C unless otherwise noted
Symbol
Parameter
V_FM
Diode Forward Voltage
t_rr
Diode Reverse Recovery Time
I_rr
Diode Peak Reverse Recovery
Current
Q_rr
Diode Reverse Recovery Charge
Test Conditions
I_F = 10A
T_C = 25°C
T_C = 100°C
T_C = 25°C
T_C = 100°C
I_F = 10A
di / dt = 20 A/us
T_C = 25°C
T_C = 100°C
T_C = 25°C
T_C = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.8
1.75
90
110
0.7
1
32
55
Max.
2.8
--
130
--
1.2
--
70
--
Units
V
ns
A
nC
Electrical Characteristics of the DIODE @ Converter T_C = 25°C unless otherwise noted
Symbol
Parameter
V_FM
Diode Forward Voltage
I_RRM
Repetitive Reverse Current
Test Conditions
I_F = 10A
T_C = 25°C
T_C = 100°C
V_R = V_RRM
T_C = 25°C
T_C = 100°C
Min.
--
--
--
--
Typ.
1.1
1.0
--
5
Max.
1.5
--
8
--
Units
V
mA
Thermal Characteristics
Inverter
Converter
Weight
Symbol
R_θJC
R_θJC
R_θJC
Parameter
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
Typ.
--
--
--
60
Max.
3.47
4.0
3.6
--
Units
°C/W
°C/W
°C/W
g
©2001 Fairchild Semiconductor Corporation
FMC6G10US60 Rev. A3